DMN2112SN-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

1.7mm

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Terminal Finish :

Matte Tin (Sn)

Weight :

7.994566mg

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

Terminal Position :

Dual

Pbfree Code :

yes

Number of Pins :

3

Turn On Delay Time :

10 ns

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Drain to Source Breakdown Voltage :

20V

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Number of Elements :

1

Nominal Vgs :

1.2 V

Transistor Element Material :

SILICON

Fall Time (Typ) :

65 ns

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 10V

Power Dissipation-Max :

500mW Ta

Radiation Hardening :

No

Additional Feature :

High Reliability

Vgs (Max) :

±8V

Turn-Off Delay Time :

75 ns

Mount :

Surface Mount

Power Dissipation :

500mW

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Length :

3.1mm

Continuous Drain Current (ID) :

1.2A

Package / Case :

TO-236-3, SC-59, SOT-23-3

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Height :

1.3mm

Pin Count :

3

Rise Time :

15ns

Time@Peak Reflow Temperature-Max (s) :

40

Dual Supply Voltage :

20V

ECCN Code :

EAR99

Factory Lead Time :

19 Weeks

Vgs(th) (Max) @ Id :

1.2V @ 1mA

Threshold Voltage :

1.2V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

100m Ω @ 500mA, 4.5V

Published :

2014

Drain-source On Resistance-Max :

0.25Ohm

FET Type :

N-Channel