DMN2104L-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Width :

1.3mm

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Transistor Application :

SWITCHING

Number of Channels :

1

Power Dissipation-Max :

1.4W Ta

Rds On (Max) @ Id, Vgs :

53m Ω @ 4.2A, 4.5V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Drain to Source Breakdown Voltage :

20V

Terminal Form :

Gull wing

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Weight :

1.437803g

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Element Configuration :

Single

FET Type :

N-Channel

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

4.3A

Number of Pins :

3

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Length :

2.9mm

Height :

1mm