DMN2075UDW-7
- Mfr.Part #
- DMN2075UDW-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 2.8A SOT363
- Stock
- 25,782
- In Stock :
- 25,782
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 40 Weeks
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Ta
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 20V
- Fall Time (Typ) :
- 6.7 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 594.3pF @ 10V
- Number of Terminations :
- 6
- Terminal Finish :
- Matte Tin (Sn)
- Rise Time :
- 9.8ns
- Drain-source On Resistance-Max :
- 0.048Ohm
- Turn-Off Delay Time :
- 28.1 ns
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Gate to Source Voltage (Vgs) :
- 8V
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 4.5V
- Published :
- 2009
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 2.8A
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 48m Ω @ 3A, 4.5V
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 7.4 ns
- Mount :
- Surface Mount
- Weight :
- 6.010099mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Vgs (Max) :
- ±8V
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 500mW Ta
- Pin Count :
- 6
- Additional Feature :
- High Reliability
- Datasheets
- DMN2075UDW-7

N-Channel Tape & Reel (TR) 48m Ω @ 3A, 4.5V ±8V 594.3pF @ 10V 7nC @ 4.5V 6-TSSOP, SC-88, SOT-363
DMN2075UDW-7 Overview
A device's maximum input capacitance is 594.3pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 28.1 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.
DMN2075UDW-7 Features
a continuous drain current (ID) of 2.8A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 28.1 ns
DMN2075UDW-7 Applications
There are a lot of Diodes Incorporated
DMN2075UDW-7 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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