DMN2075U-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

800mW

Vgs (Max) :

±8V

Factory Lead Time :

40 Weeks

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Number of Elements :

1

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1V

Fall Time (Typ) :

6.7 ns

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Length :

3mm

Terminal Position :

Dual

Rise Time :

9.8ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Height :

1.1mm

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V

Power Dissipation-Max :

800mW Ta

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

38m Ω @ 3.6A, 4.5V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mount :

Surface Mount

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Gate to Source Voltage (Vgs) :

8V

Additional Feature :

High Reliability

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

594.3pF @ 10V

DS Breakdown Voltage-Min :

20V

Pin Count :

3

Drain to Source Voltage (Vdss) :

20V

Continuous Drain Current (ID) :

4.2A

Number of Pins :

3

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

28.1 ns

Width :

1.4mm

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Turn On Delay Time :

7.4 ns

Resistance :

45mOhm

Weight :

7.994566mg

Number of Terminations :

3