DMN2065UWQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±12V

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Reference Standard :

AEC-Q101

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

56m Ω @ 2A, 4.5V

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

2.8A

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2017

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.065Ohm

Number of Terminations :

3

Power Dissipation-Max :

700mW Ta

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e3

Package / Case :

SC-70, SOT-323

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G3

ECCN Code :

EAR99

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 10V