DMN2065UWQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Vgs (Max) :

±12V

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Mounting Type :

Surface Mount

Number of Elements :

1

DS Breakdown Voltage-Min :

20V

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

2.8A

Package / Case :

SC-70, SOT-323

Published :

2017

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 10V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.065Ohm

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

56m Ω @ 2A, 4.5V

Reference Standard :

AEC-Q101

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

Power Dissipation-Max :

700mW Ta

JESD-30 Code :

R-PDSO-G3