DMN2065UW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

56m Ω @ 2A, 4.5V

Published :

2011

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

20V

ECCN Code :

EAR99

Weight :

6.010099mg

Turn On Delay Time :

3.5 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 10V

Additional Feature :

High Reliability

Fall Time (Typ) :

7.2 ns

Power Dissipation :

430mW

Turn-Off Delay Time :

23.8 ns

Package / Case :

SC-70, SOT-323

Drain Current-Max (Abs) (ID) :

2.2A

Height :

1.1mm

Packaging :

Tape and Reel (TR)

Width :

1.35mm

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Number of Channels :

1

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Vgs (Max) :

±12V

Max Junction Temperature (Tj) :

150°C

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

FET Type :

N-Channel

Length :

2.2mm

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Power Dissipation-Max :

430mW Ta

Operating Temperature :

-55°C~150°C TJ

Rise Time :

9.7ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Element Configuration :

Single

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2.8A

Drain-source On Resistance-Max :

0.065Ohm

Threshold Voltage :

1V

Number of Pins :

3

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3