DMN2050L-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

5.9A

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Published :

2008

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

29m Ω @ 5A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 4.5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

532pF @ 10V

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Width :

1.3mm

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

5.9A Ta

Number of Channels :

1

Gate to Source Voltage (Vgs) :

12V

FET Type :

N-Channel

Weight :

7.994566mg

Vgs(th) (Max) @ Id :

1.4V @ 250μA

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Length :

2.9mm

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.4W Ta

REACH SVHC :

No SVHC

Mount :

Surface Mount

Height :

1mm

Number of Pins :

3

Drain to Source Breakdown Voltage :

20V

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Resistance :

29mOhm

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

2V 4.5V

Factory Lead Time :

16 Weeks

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

Power Dissipation :

1.4W

JESD-609 Code :

e3

Terminal Position :

Dual