DMN2046U-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G3

DS Breakdown Voltage-Min :

20V

Drain-source On Resistance-Max :

0.072Ohm

JESD-609 Code :

e3

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 4.5V

Rds On (Max) @ Id, Vgs :

72m Ω @ 3.6A, 4.5V

Number of Terminations :

3

Transistor Application :

SWITCHING

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Continuous Drain Current (ID) :

3.4A

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

760mW Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Published :

2015

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.4V @ 250μA

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

292pF @ 10V

Factory Lead Time :

23 Weeks

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED