DMN2041UFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e4

Power - Max :

1.4W

FET Type :

2 N-Channel (Dual)

DS Breakdown Voltage-Min :

20V

JESD-30 Code :

S-PDSO-N6

Package / Case :

6-UDFN Exposed Pad

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2015

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.4V @ 250μA

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

4.7A

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

713pF @ 10V

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.2A, 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

1.4W

Mount :

Surface Mount

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 8V

Drain-source On Resistance-Max :

0.04Ohm