DMN2041LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 4.5V

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

30A

Turn On Delay Time :

4.69 ns

Fall Time (Typ) :

6.43 ns

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Published :

2009

Drain to Source Voltage (Vdss) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

3.95mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Number of Pins :

8

Height :

1.5mm

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 10V

Rise Time :

13.19ns

Power Dissipation :

1.16W

Continuous Drain Current (ID) :

7.63A

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

High Reliability

Pin Count :

8

Weight :

73.992255mg

Drain Current-Max (Abs) (ID) :

7.6A

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Length :

4.95mm

Turn-Off Delay Time :

22.1 ns

Number of Terminations :

8

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Base Part Number :

DMN2041LSD

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.2V @ 250µA

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

15.6nC @ 10V

Max Power Dissipation :

1.16W

Transistor Application :

SWITCHING

Factory Lead Time :

15 Weeks