DMN2041LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

7.6A

Radiation Hardening :

No

Factory Lead Time :

15 Weeks

Power Dissipation :

1.16W

Gate to Source Voltage (Vgs) :

12V

Number of Terminations :

8

Max Power Dissipation :

1.16W

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Rise Time :

13.19ns

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

7.63A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Turn On Delay Time :

4.69 ns

Drain to Source Voltage (Vdss) :

20V

Height :

1.5mm

Additional Feature :

High Reliability

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

DMN2041LSD

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 10V

Width :

3.95mm

Terminal Finish :

Matte Tin (Sn)

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

22.1 ns

Pulsed Drain Current-Max (IDM) :

30A

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Weight :

73.992255mg

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pin Count :

8

Length :

4.95mm

Gate Charge (Qg) (Max) @ Vgs :

15.6nC @ 10V

Number of Elements :

2

Fall Time (Typ) :

6.43 ns