DMN2040LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

Additional Feature :

High Reliability

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Pin Count :

8

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Radiation Hardening :

No

Base Part Number :

DMN2040LSD

Input Capacitance (Ciss) (Max) @ Vds :

562pF @ 10V

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Published :

2008

ECCN Code :

EAR99

Terminal Form :

Gull wing

Number of Elements :

2

Drain to Source Breakdown Voltage :

20V

Length :

4.95mm

Weight :

850.995985mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

30A

Width :

3.9mm

Drain Current-Max (Abs) (ID) :

7A

JESD-609 Code :

e3

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

7A

FET Feature :

Logic Level Gate

Height :

1.5mm

Rds On (Max) @ Id, Vgs :

26m Ω @ 6A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

2W

Number of Terminations :

8

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING