DMN2029USD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Rise Time :

33.3ns

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Published :

2013

Additional Feature :

High Reliability

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Length :

4.95mm

Number of Terminations :

8

ECCN Code :

EAR99

Max Power Dissipation :

1.2W

Radiation Hardening :

No

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Height :

1.5mm

Fall Time (Typ) :

53.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

1171pF @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Width :

3.95mm

Reference Standard :

AEC-Q101

Drain to Source Voltage (Vdss) :

20V

Continuous Drain Current (ID) :

5.8A

Turn-Off Delay Time :

119.3 ns

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

16.5 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

DS Breakdown Voltage-Min :

20V

Gate Charge (Qg) (Max) @ Vgs :

18.6nC @ 8V

FET Type :

2 N-Channel (Dual)

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.025Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Factory Lead Time :

23 Weeks

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

25m Ω @ 6.5A, 4.5V

Number of Pins :

8

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR