DMN2028USS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Width :

4mm

Gate to Source Voltage (Vgs) :

12V

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Height :

1.5mm

Drain-source On Resistance-Max :

0.02Ohm

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

5.6A

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

11.6nC @ 4.5V

Power Dissipation-Max :

1.56W Ta

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

16 Weeks

JESD-609 Code :

e3

Pbfree Code :

yes

Pin Count :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Weight :

73.992255mg

Drain to Source Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Power Dissipation :

1.56W

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Number of Elements :

1

Threshold Voltage :

1V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

9.8A

Rise Time :

12.49ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

20m Ω @ 9.4A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

7.3A Ta

Published :

2017

Turn On Delay Time :

11.67 ns

Turn-Off Delay Time :

35.89 ns

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

12.33 ns

Transistor Element Material :

SILICON

Length :

5mm