DMN2028UFDH-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Turn-Off Delay Time :

561 ns

Width :

3.05mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.036Ohm

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Mounting Type :

Surface Mount

Turn On Delay Time :

53 ns

Drain to Source Voltage (Vdss) :

20V

Pulsed Drain Current-Max (IDM) :

40A

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

6.8A

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

151pF @ 10V

Drain to Source Breakdown Voltage :

20V

FET Feature :

Logic Level Gate

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

20m Ω @ 4A, 10V

Series :

Automotive, AEC-Q101

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual) Common Drain

Rise Time :

77ns

Factory Lead Time :

16 Weeks

Package / Case :

8-PowerVDFN

Max Power Dissipation :

1.1W

Transistor Application :

SWITCHING

Number of Terminations :

8

Fall Time (Typ) :

234 ns

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Height :

800μm

Length :

3.05mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

2