DMN2022UFDF-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

High Reliability

Number of Channels :

1

JESD-609 Code :

e4

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Mount :

Surface Mount

Package / Case :

6-UDFN Exposed Pad

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

56 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Input Capacitance (Ciss) (Max) @ Vds :

907pF @ 10V

Continuous Drain Current (ID) :

7.9A

ECCN Code :

EAR99

Power Dissipation-Max :

660mW Ta

Rds On (Max) @ Id, Vgs :

22m Ω @ 4A, 4.5V

Vgs (Max) :

±8V

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Published :

2014

JESD-30 Code :

S-PDSO-N6

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

87ns

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 8V

Turn-Off Delay Time :

632 ns

Terminal Form :

NO LEAD

Factory Lead Time :

14 Weeks

Drain-source On Resistance-Max :

0.05Ohm

Fall Time (Typ) :

239 ns

Drain to Source Breakdown Voltage :

20V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

7.9A Ta