DMN2022UFDF-7

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Mfr.Part #
DMN2022UFDF-7
Manufacturer
Diodes Incorporated
Package / Case
6-UDFN Exposed Pad
Datasheet
Download
Description
MOSFET N-CH 20V 7.9A 6UDFN
Stock
17,870
In Stock :
17,870

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
NO LEAD
Rds On (Max) @ Id, Vgs :
22m Ω @ 4A, 4.5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
1.5V 4.5V
Mount :
Surface Mount
Fall Time (Typ) :
239 ns
Number of Channels :
1
Package / Case :
6-UDFN Exposed Pad
Time@Peak Reflow Temperature-Max (s) :
30
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Element Configuration :
Single
Continuous Drain Current (ID) :
7.9A
Current - Continuous Drain (Id) @ 25°C :
7.9A Ta
Number of Terminations :
6
Terminal Position :
Dual
Drain to Source Breakdown Voltage :
20V
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
1V @ 250μA
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
56 ns
JESD-30 Code :
S-PDSO-N6
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
14 Weeks
Vgs (Max) :
±8V
ECCN Code :
EAR99
Published :
2014
Input Capacitance (Ciss) (Max) @ Vds :
907pF @ 10V
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 8V
Additional Feature :
High Reliability
JESD-609 Code :
e4
Case Connection :
DRAIN
Drain-source On Resistance-Max :
0.05Ohm
Gate to Source Voltage (Vgs) :
8V
Turn-Off Delay Time :
632 ns
FET Type :
N-Channel
Rise Time :
87ns
Power Dissipation-Max :
660mW Ta
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN2022UFDF-7 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Package / Case:6-UDFN Exposed Pad, Number of Terminations:6, Mounting Type:Surface Mount, DMN2022UFDF-7 pinout, DMN2022UFDF-7 datasheet PDF, DMN2022UFDF-7 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN2022UFDF-7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMN2022UFDF-7


N-Channel Tape & Reel (TR) 22m Ω @ 4A, 4.5V ±8V 907pF @ 10V 18nC @ 8V 6-UDFN Exposed Pad

DMN2022UFDF-7 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 907pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 632 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 56 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.In addition to reducing power consumption, this device uses drive voltage (1.5V 4.5V).

DMN2022UFDF-7 Features


a continuous drain current (ID) of 7.9A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 632 ns


DMN2022UFDF-7 Applications


There are a lot of Diodes Incorporated
DMN2022UFDF-7 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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