DMN2022UFDF-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

8V

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

660mW Ta

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 8V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Continuous Drain Current (ID) :

7.9A

Additional Feature :

High Reliability

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Number of Channels :

1

Terminal Position :

Dual

Package / Case :

6-UDFN Exposed Pad

Terminal Form :

NO LEAD

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

22m Ω @ 4A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

7.9A Ta

FET Type :

N-Channel

JESD-30 Code :

S-PDSO-N6

Turn-Off Delay Time :

632 ns

ECCN Code :

EAR99

Turn On Delay Time :

56 ns

JESD-609 Code :

e4

Published :

2014

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain to Source Breakdown Voltage :

20V

Rise Time :

87ns

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±8V

Drain-source On Resistance-Max :

0.05Ohm

Mounting Type :

Surface Mount

Fall Time (Typ) :

239 ns

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

907pF @ 10V

Vgs(th) (Max) @ Id :

1V @ 250μA