DMN2016UTS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

11.66ns

ECCN Code :

EAR99

Power Dissipation :

880mW

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

16 Weeks

Resistance :

14.5mOhm

Max Power Dissipation :

880mW

Element Configuration :

Dual

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 250μA

Mount :

Surface Mount

Continuous Drain Current (ID) :

8.58A

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

157.991892mg

Pin Count :

8

Number of Elements :

2

Terminal Form :

Gull wing

Published :

2009

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 4.5V

Number of Pins :

8

Mounting Type :

Surface Mount

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Fall Time (Typ) :

16.27 ns

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1495pF @ 10V

FET Type :

2 N-Channel (Dual) Common Drain

Turn On Delay Time :

10.39 ns

Turn-Off Delay Time :

59.38 ns

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 9.4A, 4.5V

Terminal Finish :

Matte Tin (Sn)

Height :

1.025mm

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

DMN2016U

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

20V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Length :

4.5mm

Width :

3.1mm