DMN2016LHAB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

Height :

600μm

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

15.5ns

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

7.5A

Length :

2.05mm

Turn On Delay Time :

6.9 ns

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 10V

Drain to Source Resistance :

30mOhm

Rds On Max :

15.5 mΩ

Packaging :

Cut Tape (CT)

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

40.9 ns

Min Operating Temperature :

-55°C

Max Power Dissipation :

1.2W

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual) Common Drain

Number of Pins :

6

Published :

2013

Mount :

Surface Mount

Supplier Device Package :

U-DFN2030-6

Package / Case :

6-UDFN Exposed Pad

Fall Time (Typ) :

12 ns

Drain to Source Voltage (Vdss) :

20V

Power - Max :

1.2W

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Element Configuration :

Dual

Input Capacitance :

1.55nF

Width :

3.05mm

Current - Continuous Drain (Id) @ 25°C :

7.5A

Rds On (Max) @ Id, Vgs :

15.5mOhm @ 4A, 4.5V

Factory Lead Time :

14 Weeks