DMN2015UFDE-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

660mW Ta

Number of Pins :

6

JESD-609 Code :

e4

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

9.4A

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

16.8ns

Radiation Hardening :

No

Width :

2.05mm

Gate to Source Voltage (Vgs) :

12V

JESD-30 Code :

R-PDSO-N3

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 8.5A, 4.5V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

10.5A

Case Connection :

DRAIN

Number of Channels :

1

Height :

580μm

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Mount :

Surface Mount

Package / Case :

6-PowerUDFN

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

10.5A Ta

Fall Time (Typ) :

10.9 ns

Turn On Delay Time :

7.4 ns

Gate Charge (Qg) (Max) @ Vgs :

45.6nC @ 10V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Number of Elements :

1

Length :

2.05mm

Input Capacitance (Ciss) (Max) @ Vds :

1779pF @ 10V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Factory Lead Time :

6 Weeks

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Additional Feature :

High Reliability

Drain to Source Breakdown Voltage :

20V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Terminal Position :

Dual

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

43.6 ns