DMN2013UFDEQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Automotive, AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20 V

Pin Count :

6

JESD-609 Code :

e4

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

DS Breakdown Voltage-Min :

20 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Technology :

Si

JESD-30 Code :

S-PBCC-N3

Current - Continuous Drain (Id) @ 25°C :

10.5A (Ta)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.013 Ω

Additional Feature :

High Reliability

Brand :

Diodes Incorporated

Reach Compliance Code :

Compliant

Vgs (Max) :

±8V

Product Status :

Active

Package Shape :

Square

Package :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

260

Product Category :

MOSFET

Operating Temperature :

-55°C ~ 150°C (TJ)

Polarity/Channel Type :

N-Channel

Mounting Type :

Surface Mount

Supplier Device Package :

U-DFN2020-6 (Type E)

Packaging :

Reel

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

ECCN Code :

EAR99

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Reference Standard :

AEC-Q101

Transistor Application :

SWITCHING

Number of Terminals :

3

Product Type :

MOSFET

Rds On (Max) @ Id, Vgs :

11mOhm @ 8.5A, 4.5V

Power Dissipation-Max (Abs) :

2.03 W

Case Connection :

DRAIN

Package / Case :

6-PowerUDFN

Drain Current-Max (Abs) (ID) :

10.5 A

Input Capacitance (Ciss) (Max) @ Vds :

2453 pF @ 10 V

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.1V @ 250μA

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

25.8 nC @ 8 V

Power Dissipation (Max) :

660mW (Ta)

Terminal Position :

BOTTOM

FET Feature :

-

RoHS :

Details