DMN2013UFDE-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

2453pF @ 10V

Rise Time :

24.5ns

Vgs (Max) :

±8V

Fall Time (Typ) :

20.8 ns

Transistor Element Material :

SILICON

FET Type :

N-Channel

Package / Case :

6-UDFN Exposed Pad

Height :

580μm

Published :

2012

Number of Terminations :

3

Factory Lead Time :

16 Weeks

Number of Pins :

6

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Length :

2.05mm

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

10.5A Ta

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2.05mm

Radiation Hardening :

No

Mounting Type :

Surface Mount

Mount :

Surface Mount

DS Breakdown Voltage-Min :

20V

Rds On (Max) @ Id, Vgs :

11m Ω @ 8.5A, 4.5V

Number of Channels :

1

Power Dissipation-Max :

660mW Ta

Turn-Off Delay Time :

66.4 ns

JESD-609 Code :

e4

Turn On Delay Time :

9.9 ns

Continuous Drain Current (ID) :

10.5A

Pbfree Code :

yes

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Gate to Source Voltage (Vgs) :

8V

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

25.8nC @ 8V

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

JESD-30 Code :

S-PBCC-N3

Case Connection :

DRAIN

Transistor Application :

SWITCHING