DMN2011UFDE-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 7A, 4.5V

Published :

2014

Rise Time :

2.6ns

Element Configuration :

Single

Fall Time (Typ) :

13.5 ns

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

3372pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

610mW Ta

Current - Continuous Drain (Id) @ 25°C :

11.7A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Drain to Source Voltage (Vdss) :

20V

ECCN Code :

EAR99

Package / Case :

6-UDFN Exposed Pad

FET Type :

N-Channel

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

21.6 ns

Number of Channels :

1

Vgs (Max) :

±12V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e4

Factory Lead Time :

16 Weeks

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn On Delay Time :

3.6 ns

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Continuous Drain Current (ID) :

11.7A