D45H8G
- Mfr.Part #
- D45H8G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A TO220
- Stock
- 28
- In Stock :
- 28
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -60V
- Length :
- 10.28mm
- Polarity/Channel Type :
- PNP
- Height :
- 9.28mm
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 1V
- Pbfree Code :
- yes
- Frequency :
- 40MHz
- Pin Count :
- 3
- Weight :
- 4.535924g
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Width :
- 4.82mm
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Published :
- 2004
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Number of Elements :
- 1
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10μA
- Max Power Dissipation :
- 2W
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 40MHz
- Transition Frequency :
- 40MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Factory Lead Time :
- 8 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 2W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- hFE Min :
- 60
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -10A
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 10A
- Packaging :
- Tube
- Element Configuration :
- Single
- Base Part Number :
- D45H
- Lead Free :
- Lead Free
- Datasheets
- D45H8G
D45H8G Documents

PNP -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
D45H8G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 10A volts.
D45H8G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz
D45H8G Applications
There are a lot of ON Semiconductor
D45H8G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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