D45H8G
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- Mfr.Part #
- D45H8G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A TO220
- Stock
- 28
- In Stock ：
- 28
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -60V
- Gain Bandwidth Product :
- 40MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 40MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 60
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2W
- Current Rating :
- -10A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Base Part Number :
- D45H
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Frequency :
- 40MHz
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 10μA
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-220-3
- Collector Base Voltage (VCBO) :
- 60V
- Height :
- 9.28mm
- Collector Emitter Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Width :
- 4.82mm
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Surface Mount :
- No
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 1V
- Pin Count :
- 3
- Max Collector Current :
- 10A
- Case Connection :
- COLLECTOR
- Published :
- 2004
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Weight :
- 4.535924g
- Length :
- 10.28mm
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Datasheets
- D45H8G
PNP -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
D45H8G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 10A volts.
D45H8G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz
D45H8G Applications
There are a lot of ON Semiconductor
D45H8G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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