D45H11FP
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- Mfr.Part #
- D45H11FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220FP
- Stock
- 8,896
- In Stock ：
- 8,896
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3 Full Pack
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10μA
- Collector Emitter Voltage (VCEO) :
- 80V
- ECCN Code :
- EAR99
- Power Dissipation :
- 36W
- Base Part Number :
- D45H11
- Pin Count :
- 3
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 36W
- hFE Min :
- 40
- Mount :
- Through Hole
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -1V
- Max Collector Current :
- 10A
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Datasheets
- D45H11FP
D45H11FP Documents
PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
D45H11FP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 10A volts.
D45H11FP Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
D45H11FP Applications
There are a lot of STMicroelectronics
D45H11FP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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