D45H11FP
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- Mfr.Part #
- D45H11FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220FP
- Stock
- 8,896
- In Stock ：
- 8,896
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 36W
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Case Connection :
- Isolated
- Packaging :
- Tube
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 80V
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Max Collector Current :
- 10A
- Number of Elements :
- 1
- hFE Min :
- 40
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- -1V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation :
- 36W
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- D45H11
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSFM-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- D45H11FP
D45H11FP Documents
PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
D45H11FP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 10A volts.
D45H11FP Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
D45H11FP Applications
There are a lot of STMicroelectronics
D45H11FP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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