D45H11FP
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- Mfr.Part #
- D45H11FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO220FP
- Stock
- 8,896
- In Stock ：
- 8,896
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 10A
- Current - Collector Cutoff (Max) :
- 10μA
- Base Part Number :
- D45H11
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- hFE Min :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Power Dissipation :
- 36W
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack
- Case Connection :
- Isolated
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -1V
- Collector Emitter Voltage (VCEO) :
- 80V
- Operating Temperature :
- 150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Max Power Dissipation :
- 36W
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- D45H11FP
PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
D45H11FP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 10A volts.
D45H11FP Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
D45H11FP Applications
There are a lot of STMicroelectronics
D45H11FP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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