D45H8

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Mfr.Part #
D45H8
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 60V 10A TO220
Stock
33,310
In Stock :
33,310

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
VCEsat-Max :
1 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Max Power Dissipation :
50W
Lead Free :
Lead Free
Max Collector Current :
10A
JESD-609 Code :
e3
Polarity/Channel Type :
PNP
Element Configuration :
Single
Height :
9.15mm
Contact Plating :
Tin
Transistor Application :
SWITCHING
Mount :
Through Hole
Number of Elements :
1
Current - Collector Cutoff (Max) :
10μA
Mounting Type :
Through Hole
REACH SVHC :
No SVHC
Power Dissipation :
50W
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Transition Frequency :
40MHz
Pbfree Code :
yes
Collector Emitter Saturation Voltage :
1V
Collector Emitter Breakdown Voltage :
60V
Radiation Hardening :
No
Case Connection :
COLLECTOR
Number of Pins :
3
Package / Case :
TO-220-3
Width :
4.6mm
Length :
10.4mm
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
-60V
Collector Base Voltage (VCBO) :
60V
Packaging :
Tube
Transistor Element Material :
SILICON
Number of Terminations :
3
hFE Min :
60
Base Part Number :
D45H8
Transistor Type :
PNP
JEDEC-95 Code :
TO-220AB
Weight :
4.535924g
Collector Emitter Voltage (VCEO) :
60V
Operating Temperature :
150°C TJ
Current Rating :
8A
Datasheets
D45H8
Introducing Transistors - Bipolar (BJT) - Single onsemi D45H8 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, Number of Terminations:3, Base Part Number:D45H8, Operating Temperature:150°C TJ, D45H8 pinout, D45H8 datasheet PDF, D45H8 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D45H8 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D45H8


PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

D45H8 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 40MHz.A maximum collector current of 10A volts can be achieved.

D45H8 Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 40MHz


D45H8 Applications


There are a lot of STMicroelectronics
D45H8 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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