D45H8
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- Mfr.Part #
- D45H8
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A TO220
- Stock
- 13,215
- In Stock ：
- 13,215
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 9.15mm
- Max Collector Current :
- 10A
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Transition Frequency :
- 40MHz
- VCEsat-Max :
- 1 V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 50W
- Number of Pins :
- 3
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 60V
- Voltage - Rated DC :
- -60V
- Max Power Dissipation :
- 50W
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 60V
- Base Part Number :
- D45H8
- Width :
- 4.6mm
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- 1V
- Weight :
- 4.535924g
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Pin Count :
- 3
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Length :
- 10.4mm
- Current - Collector Cutoff (Max) :
- 10μA
- hFE Min :
- 60
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 8A
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Datasheets
- D45H8
D45H8 Documents
PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
D45H8 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 40MHz.A maximum collector current of 10A volts can be achieved.
D45H8 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 40MHz
D45H8 Applications
There are a lot of STMicroelectronics
D45H8 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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