D45H5
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- Mfr.Part #
- D45H5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 10A TO220
- Stock
- 6,633
- In Stock ：
- 6,633
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Weight :
- 4.535924g
- VCEsat-Max :
- 1 V
- Collector Emitter Voltage (VCEO) :
- -45V
- Emitter Base Voltage (VEBO) :
- -5V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -1V
- ECCN Code :
- EAR99
- Height :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Voltage - Rated DC :
- -45V
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- -45V
- Transition Frequency :
- 40MHz
- Power Dissipation :
- 50W
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -10A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Length :
- 25.4mm
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Max Power Dissipation :
- 50W
- Mount :
- Through Hole
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Width :
- 6.35mm
- Max Collector Current :
- 10A
- Base Part Number :
- D45H5
- Package / Case :
- TO-220-3
- Current - Collector Cutoff (Max) :
- 10μA
- hFE Min :
- 60
- Number of Terminations :
- 3
- Datasheets
- D45H5
D45H5 Documents
PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
D45H5 Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1V.A VCE saturation (Max) of 1V @ 400mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 40MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.A maximum collector current of 10A volts is possible.
D45H5 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 40MHz
D45H5 Applications
There are a lot of STMicroelectronics
D45H5 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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