D45H11

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

Weight :

4.535924g

Voltage - Rated DC :

-80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Radiation Hardening :

No

Max Collector Current :

10A

Number of Terminations :

3

Transition Frequency :

40MHz

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Height :

9.28mm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

Base Part Number :

D45H

hFE Min :

60

Power Dissipation :

2W

Collector Emitter Saturation Voltage :

1V

Time@Peak Reflow Temperature-Max (s) :

40

Width :

4.82mm

Gain Bandwidth Product :

40MHz

Contact Plating :

Tin

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

Collector Base Voltage (VCBO) :

80V

Pbfree Code :

yes

Package / Case :

TO-220-3

Length :

10.28mm

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

80V

Polarity/Channel Type :

PNP

Current Rating :

-10A

Frequency :

40MHz

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Current - Collector Cutoff (Max) :

10μA

Lead Free :

Lead Free

Transistor Type :

PNP

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Published :

2005

Collector Emitter Breakdown Voltage :

80V

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

JESD-609 Code :

e3

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Max Power Dissipation :

2W