D45H2A
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- Mfr.Part #
- D45H2A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 8A TO220-3
- Stock
- 382
- In Stock ：
- 382
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 1.8g
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 8A 5V
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 25MHz
- Current Rating :
- -8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 100
- JESD-609 Code :
- e3
- Power Dissipation :
- 60W
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- 1V
- Lifecycle Status :
- CONSULT SALES OFFICE (Last Updated: 1 week ago)
- Frequency :
- 25MHz
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Package / Case :
- TO-220-3
- Voltage - Rated DC :
- -30V
- Max Power Dissipation :
- 60W
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 9.9mm
- Polarity/Channel Type :
- PNP
- Base Part Number :
- D45H
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Published :
- 2002
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 1.5V
- Width :
- 4.5mm
- Collector Emitter Breakdown Voltage :
- 30V
- Height :
- 9.2mm
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 17 Weeks
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Elements :
- 1
- Number of Pins :
- 3
- Transition Frequency :
- 25MHz
- Max Collector Current :
- 8A
- Packaging :
- Tube
- Datasheets
- D45H2A
PNP -55°C~150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
D45H2A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 8A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 1.5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 25MHz.During maximum operation, collector current can be as low as 8A volts.
D45H2A Features
the DC current gain for this device is 100 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 1.5V
the current rating of this device is -8A
a transition frequency of 25MHz
D45H2A Applications
There are a lot of ON Semiconductor
D45H2A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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