D45H2A
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- Mfr.Part #
- D45H2A
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 8A TO220-3
- Stock
- 382
- In Stock ：
- 382
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 8A
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 30V
- Weight :
- 1.8g
- Transition Frequency :
- 25MHz
- Frequency :
- 25MHz
- Gain Bandwidth Product :
- 25MHz
- Max Power Dissipation :
- 60W
- Lifecycle Status :
- CONSULT SALES OFFICE (Last Updated: 1 week ago)
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Power Dissipation :
- 60W
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Published :
- 2002
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Emitter Base Voltage (VEBO) :
- 1.5V
- Height :
- 9.2mm
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Voltage - Rated DC :
- -30V
- Mount :
- Through Hole
- Width :
- 4.5mm
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- RoHS Status :
- RoHS Compliant
- Length :
- 9.9mm
- Current Rating :
- -8A
- Collector Emitter Saturation Voltage :
- 1V
- Factory Lead Time :
- 17 Weeks
- Lead Free :
- Lead Free
- Base Part Number :
- D45H
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 8A 5V
- JESD-609 Code :
- e3
- hFE Min :
- 100
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Datasheets
- D45H2A
PNP -55°C~150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
D45H2A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 8A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 1.5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 25MHz.During maximum operation, collector current can be as low as 8A volts.
D45H2A Features
the DC current gain for this device is 100 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 1.5V
the current rating of this device is -8A
a transition frequency of 25MHz
D45H2A Applications
There are a lot of ON Semiconductor
D45H2A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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