BUZ355

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Series :

*

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Manufacturer :

Rochester Electronics LLC

Drain-source On Resistance-Max :

1.5 Ω

Terminal Form :

THROUGH-HOLE

Package :

Bulk

Package Shape :

RECTANGULAR

JESD-609 Code :

e0

Pbfree Code :

No

Surface Mount :

No

JEDEC-95 Code :

TO-218

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Number of Terminals :

3

Terminal Finish :

TIN LEAD

Avalanche Energy Rating (Eas) :

720 mJ

DS Breakdown Voltage-Min :

800 V

Reach Compliance Code :

Unknown

Number of Elements :

1

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

21 A