BUZ31HXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

200 mJ

Drain-source On Resistance-Max :

0.2Ohm

Continuous Drain Current (ID) :

14.5A

Power Dissipation-Max :

95W Tc

Number of Elements :

1

FET Type :

N-Channel

Turn On Delay Time :

12 ns

Drain to Source Voltage (Vdss) :

200V

Pulsed Drain Current-Max (IDM) :

58A

Turn-Off Delay Time :

150 ns

Rise Time :

50ns

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

200m Ω @ 9A, 5V

Series :

SIPMOS®

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

14.5A Tc

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Pbfree Code :

yes

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Terminations :

3

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

200V

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

5V

Power Dissipation :

95W

Pin Count :

3

Radiation Hardening :

No

JESD-30 Code :

R-PSFM-T3

Published :

2005

Fall Time (Typ) :

60 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

1120pF @ 25V