BUZ31H3046
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- Mfr.Part #
- BUZ31H3046
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 700
- In Stock ：
- 700
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 58A
- Drain-source On Resistance-Max :
- 0.2Ohm
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1120pF @ 25V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 95W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 14.5A
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Breakdown Voltage :
- 200V
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Published :
- 2005
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 50ns
- Height :
- 9.45mm
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Turn On Delay Time :
- 12 ns
- Series :
- SIPMOS®
- Current - Continuous Drain (Id) @ 25°C :
- 14.5A Tc
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Length :
- 10.36mm
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Power Dissipation :
- 95W
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 9A, 5V
- Turn-Off Delay Time :
- 150 ns
- Max Dual Supply Voltage :
- 200V
- Width :
- 4.52mm
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Vgs (Max) :
- ±20V
- Datasheets
- BUZ31H3046
N-Channel Tube 200m Ω @ 9A, 5V ±20V 1120pF @ 25V TO-262-3 Long Leads, I2Pak, TO-262AA
BUZ31H3046XKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1120pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.As a result of its turn-off delay time, which is 150 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 58A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 200V.In addition to reducing power consumption, this device uses drive voltage (5V).
BUZ31H3046XKSA1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 14.5A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 58A.
BUZ31H3046XKSA1 Applications
There are a lot of Infineon Technologies
BUZ31H3046XKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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