BUZ30AH3045A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Polarity/Channel Type :

N-Channel

Packaging :

MouseReel

Surface Mount :

yes

Series :

SIPMOS®

Mounting Style :

SMD/SMT

Length :

10 mm

Drain to Source Voltage (Vdss) :

200 V

JEDEC-95 Code :

TO-263AB

Drain-source On Resistance-Max :

0.13 Ω

Technology :

Si

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

21 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

-

Manufacturer :

Infineon

Pin Count :

4

Channel Mode :

Enhancement

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

4V @ 1mA

Package / Case :

TO-263-3

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+ 150 C

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

MOSFET

Subcategory :

MOSFETs

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current Id :

21

Number of Terminals :

2

Avalanche Energy Rating (Eas) :

450 mJ

Configuration :

Single

Power Dissipation (Max) :

125W (Tc)

Power Dissipation-Max (Abs) :

125 W

Terminal Form :

Gull wing

Height :

15.65 mm

Qualification Status :

Not Qualified

Case Connection :

DRAIN

FET Type :

N-Channel

Channel Type :

N

Current - Continuous Drain (Id) @ 25°C :

21A (Tc)

Number of Channels :

1 Channel

Pulsed Drain Current-Max (IDM) :

84 A

Tradename :

SIPMOS

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Width :

4.4 mm

Mounting Type :

Surface Mount

RoHS :

Details

Pbfree Code :

yes

Package :

Bulk

Terminal Position :

Single

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Drive Voltage (Max Rds On, Min Rds On) :

10V

Rise Time :

70 ns

DS Breakdown Voltage-Min :

200 V

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Brand :

Infineon Technologies

Product Category :

MOSFET

ECCN Code :

EAR99

Supplier Device Package :

PG-TO263-3-2

Rds On (Max) @ Id, Vgs :

130mOhm @ 13.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1900 pF @ 25 V