BUZ30A H3045A
- Mfr.Part #
- BUZ30A H3045A
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 13,264
- In Stock :
- 13,264
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Type :
- MOSFET
- Tradename :
- SIPMOS
- Power Dissipation (Max) :
- 125W (Tc)
- Technology :
- Si
- Number of Channels :
- 1 Channel
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Configuration :
- Single
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 200 V
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900 pF @ 25 V
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- PG-TO263-3-2
- Maximum Operating Temperature :
- + 150 C
- JESD-30 Code :
- R-PSSO-G2
- Package Shape :
- RECTANGULAR
- Manufacturer :
- Infineon
- Pulsed Drain Current-Max (IDM) :
- 84 A
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- SMD/SMT
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-263-3
- Height :
- 15.65 mm
- Pin Count :
- 4
- Series :
- SIPMOS®
- Avalanche Energy Rating (Eas) :
- 450 mJ
- ECCN Code :
- EAR99
- Package :
- Bulk
- Width :
- 4.4 mm
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Brand :
- Infineon Technologies
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 21A (Tc)
- Reach Compliance Code :
- Compliant
- Transistor Type :
- 1 N-Channel
- Number of Terminals :
- 2
- FET Feature :
- -
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Length :
- 10 mm
- Pbfree Code :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Category :
- MOSFET
- Continuous Drain Current Id :
- 21
- Drain-source On Resistance-Max :
- 0.13 Ω
- Power Dissipation-Max (Abs) :
- 125 W
- Rise Time :
- 70 ns
- Rds On (Max) @ Id, Vgs :
- 130mOhm @ 13.5A, 10V
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 21 A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Subcategory :
- MOSFETs
- Mounting Type :
- Surface Mount
- Product Status :
- Active
- Packaging :
- MouseReel
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 200 V
- Channel Mode :
- Enhancement
- JEDEC-95 Code :
- TO-263AB
- Channel Type :
- N
- Terminal Form :
- Gull wing
- Terminal Position :
- Single
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Datasheets
- BUZ30A H3045A
BUZ30A H3045A Documents

Si N-Channel MouseReel 130mOhm @ 13.5A, 10V ±20V 1900 pF @ 25 V 200 V TO-263-3
BUZ30AH3045A Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 450 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1900 pF @ 25 V.There is no drain current on this device since the maximum continuous current it can conduct is 21 A.There is a peak drain current of 84 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200 V drain to source voltage (Vdss) in order to function.
BUZ30AH3045A Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 84 A.
a 200 V drain to source voltage (Vdss)
BUZ30AH3045A Applications
There are a lot of Infineon
BUZ30AH3045A applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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