BUZ30A H3045A
- Mfr.Part #
- BUZ30A H3045A
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 13,264
- In Stock :
- 13,264
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 450 mJ
- JEDEC-95 Code :
- TO-263AB
- Series :
- SIPMOS®
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Product Category :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 21 A
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Product Type :
- MOSFET
- Transistor Element Material :
- SILICON
- Mounting Style :
- SMD/SMT
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900 pF @ 25 V
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS :
- Details
- Polarity/Channel Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- ECCN Code :
- EAR99
- Maximum Operating Temperature :
- + 150 C
- Drain-source On Resistance-Max :
- 0.13 Ω
- Case Connection :
- DRAIN
- Channel Mode :
- Enhancement
- Surface Mount :
- yes
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Brand :
- Infineon Technologies
- Drain to Source Voltage (Vdss) :
- 200 V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Length :
- 10 mm
- Width :
- 4.4 mm
- Subcategory :
- MOSFETs
- FET Feature :
- -
- Rds On (Max) @ Id, Vgs :
- 130mOhm @ 13.5A, 10V
- Continuous Drain Current Id :
- 21
- Tradename :
- SIPMOS
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Technology :
- Si
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 84 A
- Current - Continuous Drain (Id) @ 25°C :
- 21A (Tc)
- Pin Count :
- 4
- Channel Type :
- N
- Mounting Type :
- Surface Mount
- Rise Time :
- 70 ns
- Manufacturer :
- Infineon
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-3
- Power Dissipation (Max) :
- 125W (Tc)
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- MouseReel
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Power Dissipation-Max (Abs) :
- 125 W
- Height :
- 15.65 mm
- Supplier Device Package :
- PG-TO263-3-2
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Package :
- Bulk
- Number of Terminals :
- 2
- JESD-30 Code :
- R-PSSO-G2
- DS Breakdown Voltage-Min :
- 200 V
- Datasheets
- BUZ30A H3045A

Si N-Channel MouseReel 130mOhm @ 13.5A, 10V ±20V 1900 pF @ 25 V 200 V TO-263-3
BUZ30AH3045A Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 450 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1900 pF @ 25 V.There is no drain current on this device since the maximum continuous current it can conduct is 21 A.There is a peak drain current of 84 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200 V drain to source voltage (Vdss) in order to function.
BUZ30AH3045A Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 84 A.
a 200 V drain to source voltage (Vdss)
BUZ30AH3045A Applications
There are a lot of Infineon
BUZ30AH3045A applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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