BUZ31 E3046

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

200m Ω @ 9A, 5V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

200V

Input Capacitance (Ciss) (Max) @ Vds :

1120pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Series :

SIPMOS®

Drive Voltage (Max Rds On,Min Rds On) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

14.5A Tc

Drain-source On Resistance-Max :

0.2Ohm

Transistor Application :

SWITCHING

Published :

2005

Surface Mount :

No

DS Breakdown Voltage-Min :

200V

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

13.5A

Vgs(th) (Max) @ Id :

4V @ 1mA

Qualification Status :

Not Qualified

Power Dissipation-Max :

95W Tc

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

200 mJ

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

54A

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSIP-T3

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Number of Terminations :

3

Number of Elements :

1