BUZ30A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Resistance :

130mOhm

Transistor Element Material :

SILICON

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

130m Ω @ 13.5A, 10V

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Published :

2005

JEDEC-95 Code :

TO-220AB

Reverse Recovery Time :

180 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Height :

9.25mm

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Packaging :

Tube

Voltage - Rated DC :

200V

Width :

4.4mm

Pulsed Drain Current-Max (IDM) :

84A

Turn-Off Delay Time :

250 ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

125W Tc

Vgs (Max) :

±20V

Length :

10mm

Additional Feature :

AVALANCHE RATED

REACH SVHC :

No SVHC

Series :

SIPMOS®

Mount :

Through Hole

Power Dissipation :

125W

Nominal Vgs :

3 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

21A

Gate to Source Voltage (Vgs) :

20V

Rise Time :

70ns

Avalanche Energy Rating (Eas) :

450 mJ

Continuous Drain Current (ID) :

21A

Number of Elements :

1

Termination :

Through Hole

FET Type :

N-Channel

Mounting Type :

Through Hole

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Drain to Source Breakdown Voltage :

200V

Lead Pitch :

2.54mm

Pin Count :

3

Fall Time (Typ) :

90 ns

Turn On Delay Time :

30 ns

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Dual Supply Voltage :

200V

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE