BUZ30A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

84A

Continuous Drain Current (ID) :

21A

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

SIPMOS®

Number of Elements :

1

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Power Dissipation :

125W

ECCN Code :

EAR99

FET Type :

N-Channel

Turn-Off Delay Time :

250 ns

Length :

10mm

Current Rating :

21A

Drain to Source Breakdown Voltage :

200V

Termination :

Through Hole

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

450 mJ

Published :

2005

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

130m Ω @ 13.5A, 10V

Reverse Recovery Time :

180 ns

Height :

9.25mm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Fall Time (Typ) :

90 ns

Lead Free :

Contains Lead

Voltage - Rated DC :

200V

Turn On Delay Time :

30 ns

Mounting Type :

Through Hole

Packaging :

Tube

Dual Supply Voltage :

200V

Nominal Vgs :

3 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Rise Time :

70ns

Vgs(th) (Max) @ Id :

4V @ 1mA

RoHS Status :

RoHS Compliant

Number of Pins :

3

Power Dissipation-Max :

125W Tc

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Package / Case :

TO-220-3

Width :

4.4mm

Lead Pitch :

2.54mm

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Resistance :

130mOhm

REACH SVHC :

No SVHC

Number of Terminations :

3