BUZ31 H3045A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SIPMOS®

Number of Elements :

1

DS Breakdown Voltage-Min :

200V

Published :

2004

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.2Ohm

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

200V

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

14.5A Tc

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

200m Ω @ 9A, 10V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

58A

Transistor Element Material :

SILICON

Power Dissipation-Max :

95W Tc

Drain Current-Max (Abs) (ID) :

14.5A

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

200 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1120pF @ 25V