BUZ30AH
- Mfr.Part #
- BUZ30AH
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 21A TO220-3
- Stock
- 13,264
- In Stock :
- 13,264
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Tradename :
- SIPMOS
- Channel Type :
- N
- Product Category :
- MOSFET
- Package Shape :
- RECTANGULAR
- Product Status :
- Active
- Mounting Style :
- SMD/SMT
- JEDEC-95 Code :
- TO-263AB
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Continuous Drain Current Id :
- 21
- Subcategory :
- MOSFETs
- Pin Count :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- ECCN Code :
- EAR99
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 84 A
- Technology :
- Si
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900 pF @ 25 V
- Package / Case :
- TO-263-3
- Drain-source On Resistance-Max :
- 0.13 Ω
- Width :
- 4.4 mm
- Channel Mode :
- Enhancement
- Reach Compliance Code :
- Compliant
- Surface Mount :
- yes
- RoHS :
- Details
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- FET Feature :
- -
- Power Dissipation-Max (Abs) :
- 125 W
- DS Breakdown Voltage-Min :
- 200 V
- Terminal Position :
- Single
- Rise Time :
- 70 ns
- JESD-30 Code :
- R-PSSO-G2
- Brand :
- Infineon Technologies
- Configuration :
- Single
- Height :
- 15.65 mm
- Package :
- Bulk
- Power Dissipation (Max) :
- 125W (Tc)
- Drain to Source Voltage (Vdss) :
- 200 V
- Current - Continuous Drain (Id) @ 25°C :
- 21A (Tc)
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Maximum Operating Temperature :
- + 150 C
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 130mOhm @ 13.5A, 10V
- Number of Terminals :
- 2
- Length :
- 10 mm
- FET Type :
- N-Channel
- Supplier Device Package :
- PG-TO263-3-2
- Transistor Polarity :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- MouseReel
- Vgs (Max) :
- ±20V
- Series :
- SIPMOS®
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- Minimum Operating Temperature :
- - 55 C
- Qualification Status :
- Not Qualified
- Manufacturer :
- Infineon
- Transistor Type :
- 1 N-Channel
- Drain Current-Max (Abs) (ID) :
- 21 A
- Datasheets
- BUZ30AH

Si N-Channel MouseReel 130mOhm @ 13.5A, 10V ±20V 1900 pF @ 25 V 200 V TO-263-3
BUZ30AH3045A Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 450 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1900 pF @ 25 V.There is no drain current on this device since the maximum continuous current it can conduct is 21 A.There is a peak drain current of 84 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200 V drain to source voltage (Vdss) in order to function.
BUZ30AH3045A Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 84 A.
a 200 V drain to source voltage (Vdss)
BUZ30AH3045A Applications
There are a lot of Infineon
BUZ30AH3045A applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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