BUZ32HXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.4 Ω

JESD-30 Code :

R-PSFM-T3

Package :

Bulk

Pin Count :

3

Factory Lead Time :

1 Week

Power Dissipation :

75

Terminal Position :

Single

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature :

-55°C ~ 150°C (TJ)

DS Breakdown Voltage-Min :

200 V

Series :

SIPMOS®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current Id :

9.5

Current - Continuous Drain (Id) @ 25°C :

9.5A (Tc)

Rds On (Max) @ Id, Vgs :

400mOhm @ 6A, 10V

Terminal Form :

THROUGH-HOLE

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Type :

N

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

200 V

Polarity/Channel Type :

N-Channel

Supplier Device Package :

PG-TO220-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

120 mJ

FET Feature :

-

Qualification Status :

Not Qualified

Technology :

MOSFET (Metal Oxide)

Surface Mount :

No

Pbfree Code :

yes

Mounting Type :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

Number of Terminals :

3

Package Shape :

RECTANGULAR

Vgs (Max) :

±20V

Reach Compliance Code :

Unknown

Number of Elements :

1

Manufacturer :

Infineon Technologies AG

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

38 A

Product Status :

Active

Power Dissipation (Max) :

75W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

530 pF @ 25 V