BUZ32H3045A
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- Mfr.Part #
- BUZ32H3045A
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 1,249
- In Stock ：
- 1,249
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2004
- Power Dissipation-Max :
- 75W Tc
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 6A, 10V
- Avalanche Energy Rating (Eas) :
- 120 mJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 200V
- Pbfree Code :
- No
- Pin Count :
- 4
- Vgs (Max) :
- ±20V
- Rise Time :
- 40ns
- Continuous Drain Current (ID) :
- 9.5A
- Fall Time (Typ) :
- 30 ns
- Turn-Off Delay Time :
- 55 ns
- Turn On Delay Time :
- 10 ns
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Series :
- SIPMOS®
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- DS Breakdown Voltage-Min :
- 200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 530pF @ 25V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.4Ohm
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Datasheets
- BUZ32H3045A
N-Channel Tube 400m Ω @ 6A, 10V ±20V 530pF @ 25V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUZ32H3045AATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 120 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 530pF @ 25V.This device conducts a continuous drain current (ID) of 9.5A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 55 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BUZ32H3045AATMA1 Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 9.5A
the turn-off delay time is 55 ns
a 200V drain to source voltage (Vdss)
BUZ32H3045AATMA1 Applications
There are a lot of Infineon Technologies
BUZ32H3045AATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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