BUZ323

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e0

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

THROUGH-HOLE

JEDEC-95 Code :

TO-218AA

Drain-source On Resistance-Max :

0.3 Ω

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Series :

-

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Subcategory :

FET General Purpose Power

Pulsed Drain Current-Max (IDM) :

60 A

Number of Terminals :

3

Drain Current-Max (Abs) (ID) :

15 A

Manufacturer :

Infineon Technologies AG

Surface Mount :

No

Avalanche Energy Rating (Eas) :

790 mJ

Number of Elements :

1

Package Shape :

RECTANGULAR

Reach Compliance Code :

Unknown

Package :

Bulk

Product Status :

Active

DS Breakdown Voltage-Min :

400 V

Terminal Position :

Single

Power Dissipation-Max (Abs) :

170 W

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

Tin/Lead (Sn/Pb)

ECCN Code :

EAR99