BUZ32 H

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Packaging :

Tube

Power Dissipation-Max :

75W Tc

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.4Ohm

Surface Mount :

No

FET Type :

N-Channel

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

38A

Published :

2005

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Drain Current-Max (Abs) (ID) :

9.5A

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

DS Breakdown Voltage-Min :

200V

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

120 mJ

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

200V

Rds On (Max) @ Id, Vgs :

400m Ω @ 6A, 10V

Reach Compliance Code :

Compliant

Series :

SIPMOS®

Vgs(th) (Max) @ Id :

4V @ 1mA

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Terminal Position :

Single