BUZ32

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

200V

Package / Case :

TO-220-3

Terminal Finish :

Matte Tin (Sn)

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Drain-source On Resistance-Max :

0.4Ohm

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

55 ns

Number of Elements :

1

Series :

SIPMOS®

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

400m Ω @ 6A, 10V

Fall Time (Typ) :

30 ns

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

9.5A

RoHS Status :

RoHS Compliant

Current Rating :

9.5A

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 1mA

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

75W Tc

JESD-609 Code :

e3

Rise Time :

40ns

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Power Dissipation :

75W

Drain to Source Breakdown Voltage :

200V

FET Type :

N-Channel