BUZ32

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

200V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

75W

Power Dissipation-Max :

75W Tc

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Number of Pins :

3

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

400m Ω @ 6A, 10V

Element Configuration :

Single

Drain-source On Resistance-Max :

0.4Ohm

Rise Time :

40ns

Published :

2005

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

200V

Mounting Type :

Through Hole

Turn-Off Delay Time :

55 ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

9.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Fall Time (Typ) :

30 ns

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

RoHS Compliant

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Series :

SIPMOS®

FET Type :

N-Channel

ECCN Code :

EAR99

Packaging :

Tube

Number of Elements :

1

Pin Count :

3

Current Rating :

9.5A