BUZ31L H

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

95W Tc

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Drain-source On Resistance-Max :

0.2Ohm

Series :

SIPMOS®

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

200 mJ

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

54A

Rds On (Max) @ Id, Vgs :

200m Ω @ 7A, 5V

Mounting Type :

Through Hole

ECCN Code :

EAR99

Pin Count :

3

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

200V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

2V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

5V

Packaging :

Tube

Surface Mount :

No

Package / Case :

TO-220-3

Drain Current-Max (Abs) (ID) :

13.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pbfree Code :

yes

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

13.5A Tc

Published :

2000

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

200V