BUL147G

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Mfr.Part #
BUL147G
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
POWER BIPOLAR TRANSISTOR NPN
Stock
1,271
In Stock :
1,271

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Case Connection :
COLLECTOR
Pin Count :
3
Gain Bandwidth Product :
14 MHz
Polarity :
NPN
Collector Base Voltage (VCBO) :
700 V
Package Shape :
RECTANGULAR
Pbfree Code :
yes
Element Configuration :
Single
Number of Pins :
3
hFE Min :
10
Product Status :
Active
Peak Reflow Temperature (Cel) :
260
Collector-Emitter Voltage-Max :
400 V
Transistor Application :
SWITCHING
Terminal Finish :
MATTE TIN
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Terminal Position :
Single
Min Operating Temperature :
-65 °C
Transistor Element Material :
SILICON
RoHS :
Compliant
Collector Current-Max (IC) :
8 A
Max Power Dissipation :
125 W
Terminal Form :
THROUGH-HOLE
Polarity/Channel Type :
NPN
Max Collector Current :
8 A
JESD-609 Code :
e3
Series :
*
Manufacturer Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Number of Elements :
1
Surface Mount :
No
Manufacturer :
Rochester Electronics LLC
Collector Emitter Voltage (VCEO) :
400 V
Qualification Status :
COMMERCIAL
Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Number of Terminals :
3
Package :
Bulk
Lead Free :
Lead Free
Emitter Base Voltage (VEBO) :
9 V
JEDEC-95 Code :
TO-220AB
JESD-30 Code :
R-PSFM-T3
Configuration :
Single
Collector Emitter Saturation Voltage :
920 mV
DC Current Gain-Min (hFE) :
8
Max Operating Temperature :
150 °C
Reach Compliance Code :
Unknown
Datasheets
BUL147G
Introducing Transistors - Bipolar (BJT) - Single onsemi BUL147G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, BUL147G pinout, BUL147G datasheet PDF, BUL147G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUL147G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUL147G


1 Elements SILICON NPN

BUL147G Overview


A collector emitter saturation voltage of 920 mV allows maximum design flexibility.The base voltage of the emitter can be kept at 9 V to achieve high efficiency.Maximum collector-emitter voltage can be set to 400 V.The maximum collector current is 8 A volts.

BUL147G Features


a collector emitter saturation voltage of 920 mV
the emitter base voltage is kept at 9 V


BUL147G Applications


There are a lot of onsemi
BUL147G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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