BUL1203EFP
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- Mfr.Part #
- BUL1203EFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 550V 5A TO220-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Max Power Dissipation :
- 36W
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100μA
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 1.2kV
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 550V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 9 @ 2A 5V
- Emitter Base Voltage (VEBO) :
- 9V
- Power Dissipation :
- 36W
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3A
- JESD-609 Code :
- e3
- hFE Min :
- 10
- Case Connection :
- Isolated
- Max Collector Current :
- 5A
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 550V
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BUL1203
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3 Full Pack
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Datasheets
- BUL1203EFP
BUL1203EFP Documents
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
BUL1203EFP Overview
In this device, the DC current gain is 9 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1A, 3A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.
BUL1203EFP Features
the DC current gain for this device is 9 @ 2A 5V
the vce saturation(Max) is 1.5V @ 1A, 3A
the emitter base voltage is kept at 9V
BUL1203EFP Applications
There are a lot of STMicroelectronics
BUL1203EFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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