BUL1203EFP
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- Mfr.Part #
- BUL1203EFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 550V 5A TO220-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 550V
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 9V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3A
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSFM-T3
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- hFE Min :
- 10
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 5A
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3 Full Pack
- Collector Emitter Voltage (VCEO) :
- 550V
- Power Dissipation :
- 36W
- Contact Plating :
- Tin
- Max Power Dissipation :
- 36W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 9 @ 2A 5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 1.2kV
- Base Part Number :
- BUL1203
- Case Connection :
- Isolated
- Current - Collector Cutoff (Max) :
- 100μA
- Mount :
- Through Hole
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Datasheets
- BUL1203EFP
BUL1203EFP Documents
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
BUL1203EFP Overview
In this device, the DC current gain is 9 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1A, 3A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.
BUL1203EFP Features
the DC current gain for this device is 9 @ 2A 5V
the vce saturation(Max) is 1.5V @ 1A, 3A
the emitter base voltage is kept at 9V
BUL1203EFP Applications
There are a lot of STMicroelectronics
BUL1203EFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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