BUL1203EFP
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- Mfr.Part #
- BUL1203EFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 550V 5A TO220-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Max Collector Current :
- 5A
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation :
- 36W
- Packaging :
- Tube
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Polarity/Channel Type :
- NPN
- Case Connection :
- Isolated
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 9V
- Base Part Number :
- BUL1203
- Max Power Dissipation :
- 36W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- hFE Min :
- 10
- Collector Emitter Breakdown Voltage :
- 550V
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Collector Base Voltage (VCBO) :
- 1.2kV
- Current - Collector Cutoff (Max) :
- 100μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 9 @ 2A 5V
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 550V
- JESD-609 Code :
- e3
- Datasheets
- BUL1203EFP
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
BUL1203EFP Overview
In this device, the DC current gain is 9 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1A, 3A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.
BUL1203EFP Features
the DC current gain for this device is 9 @ 2A 5V
the vce saturation(Max) is 1.5V @ 1A, 3A
the emitter base voltage is kept at 9V
BUL1203EFP Applications
There are a lot of STMicroelectronics
BUL1203EFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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