BUL147

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Mfr.Part #
BUL147
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
POWER BIPOLAR TRANSISTOR NPN
Stock
16,328
In Stock :
16,328

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain-Min (hFE) :
8
Reach Compliance Code :
Unknown
Qualification Status :
COMMERCIAL
hFE Min :
10
Max Operating Temperature :
150 °C
Package :
Bulk
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
JESD-30 Code :
R-PSFM-T3
RoHS :
Compliant
Terminal Finish :
TIN LEAD
Gain Bandwidth Product :
14 MHz
Configuration :
Single
Series :
*
Min Operating Temperature :
-65 °C
JEDEC-95 Code :
TO-220AB
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
Package Shape :
RECTANGULAR
Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Lead Free :
Contains Lead
Collector Current-Max (IC) :
8 A
Product Status :
Active
Case Connection :
COLLECTOR
Element Configuration :
Single
JESD-609 Code :
e0
Pbfree Code :
No
Peak Reflow Temperature (Cel) :
240
Polarity/Channel Type :
NPN
Number of Pins :
3
Manufacturer :
Rochester Electronics LLC
Polarity :
NPN
Collector Emitter Voltage (VCEO) :
400 V
Emitter Base Voltage (VEBO) :
9 V
Number of Terminals :
3
Collector-Emitter Voltage-Max :
400 V
Max Power Dissipation :
125 W
Max Collector Current :
8 A
Transistor Application :
SWITCHING
Terminal Position :
Single
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
920 mV
Collector Base Voltage (VCBO) :
700 V
Pin Count :
3
Manufacturer Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Number of Elements :
1
Introducing Transistors - Bipolar (BJT) - Single onsemi BUL147 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, BUL147 pinout, BUL147 datasheet PDF, BUL147 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUL147 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUL147


1 Elements SILICON NPN

BUL147 Overview


Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 920 mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9 V.In the 400 V setting, the maximum collector-emitter voltage is set.During maximum operation, collector current can be as low as 8 A volts.

BUL147 Features


a collector emitter saturation voltage of 920 mV
the emitter base voltage is kept at 9 V


BUL147 Applications


There are a lot of onsemi
BUL147 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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