BUL147
- Mfr.Part #
- BUL147
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- POWER BIPOLAR TRANSISTOR NPN
- Stock
- 16,328
- In Stock :
- 16,328
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- DC Current Gain-Min (hFE) :
- 8
- Terminal Finish :
- TIN LEAD
- Collector Emitter Saturation Voltage :
- 920 mV
- Surface Mount :
- No
- Terminal Position :
- Single
- hFE Min :
- 10
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e0
- Max Collector Current :
- 8 A
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Manufacturer Lifecycle Status :
- Obsolete (Last Updated: 2 years ago)
- Pbfree Code :
- No
- Qualification Status :
- COMMERCIAL
- Lifecycle Status :
- Obsolete (Last Updated: 2 years ago)
- Series :
- *
- Collector Base Voltage (VCBO) :
- 700 V
- Gain Bandwidth Product :
- 14 MHz
- Collector Emitter Voltage (VCEO) :
- 400 V
- Reach Compliance Code :
- Unknown
- Package :
- Bulk
- Peak Reflow Temperature (Cel) :
- 240
- Max Operating Temperature :
- 150 °C
- Polarity :
- NPN
- Collector Current-Max (IC) :
- 8 A
- Min Operating Temperature :
- -65 °C
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Product Status :
- Active
- Number of Elements :
- 1
- Terminal Form :
- THROUGH-HOLE
- Manufacturer :
- Rochester Electronics LLC
- RoHS :
- Compliant
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Lead Free :
- Contains Lead
- Collector-Emitter Voltage-Max :
- 400 V
- Max Power Dissipation :
- 125 W
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Emitter Base Voltage (VEBO) :
- 9 V
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- BUL147

1 Elements SILICON NPN
BUL147 Overview
Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 920 mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9 V.In the 400 V setting, the maximum collector-emitter voltage is set.During maximum operation, collector current can be as low as 8 A volts.
BUL147 Features
a collector emitter saturation voltage of 920 mV
the emitter base voltage is kept at 9 V
BUL147 Applications
There are a lot of onsemi
BUL147 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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