BUL1102EFP
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- Mfr.Part #
- BUL1102EFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 450V 4A TO220FP
- Stock
- 2,662
- In Stock ：
- 2,662
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 12V
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 450V
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 2A 5V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100μA
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 400mA, 2A
- JEDEC-95 Code :
- TO-220AB
- Configuration :
- Single
- Number of Terminations :
- 3
- Case Connection :
- Isolated
- Max Power Dissipation :
- 30W
- ECCN Code :
- EAR99
- Power Dissipation :
- 70W
- Number of Pins :
- 3
- Base Part Number :
- BUL1102
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Max Collector Current :
- 4A
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 30W
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Emitter Breakdown Voltage :
- 450V
- Package / Case :
- TO-220-3 Full Pack
- Datasheets
- BUL1102EFP
BUL1102EFP Documents
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
BUL1102EFP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 12 @ 2A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 12V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 4A volts.
BUL1102EFP Features
the DC current gain for this device is 12 @ 2A 5V
the vce saturation(Max) is 1.5V @ 400mA, 2A
the emitter base voltage is kept at 12V
BUL1102EFP Applications
There are a lot of STMicroelectronics
BUL1102EFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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