BUL128

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Mfr.Part #
BUL128
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 4A TO220
Stock
62,129
In Stock :
62,129

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
JESD-609 Code :
e3
Max Power Dissipation :
70W
Weight :
4.535924g
Additional Feature :
High Reliability
Power Dissipation :
70W
REACH SVHC :
No SVHC
Current Rating :
4A
Number of Terminations :
3
Current - Collector Cutoff (Max) :
100μA
JEDEC-95 Code :
TO-220AB
Operating Temperature :
150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
14 @ 2A 5V
Package / Case :
TO-220-3
Pbfree Code :
yes
Packaging :
Tube
Radiation Hardening :
No
Number of Elements :
1
Voltage - Rated DC :
400V
Collector Base Voltage (VCBO) :
700V
Transistor Element Material :
SILICON
Length :
10.4mm
Height :
9.15mm
Pin Count :
3
Terminal Finish :
Matte Tin (Sn)
Lead Free :
Lead Free
Transistor Type :
NPN
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
400V
Width :
4.6mm
Emitter Base Voltage (VEBO) :
9V
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
NPN
Base Part Number :
BUL128
Collector Emitter Voltage (VCEO) :
400V
hFE Min :
14
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Collector Emitter Saturation Voltage :
1.5V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 1A, 4A
Number of Pins :
3
Mounting Type :
Through Hole
Max Collector Current :
4A
Datasheets
BUL128
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL128 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-220-3, Base Part Number:BUL128, Number of Pins:3, Mounting Type:Through Hole, BUL128 pinout, BUL128 datasheet PDF, BUL128 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL128 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL128


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL128 Overview


In this device, the DC current gain is 14 @ 2A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 1A, 4A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).Maximum collector currents can be below 4A volts.

BUL128 Features


the DC current gain for this device is 14 @ 2A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V
the current rating of this device is 4A


BUL128 Applications


There are a lot of STMicroelectronics
BUL128 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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